PIBE: Parallel ion beam etching of sections collected on wafer for ultra large-scale connectomics
We have developed a parallel ion beam thinning device with low incident ion beam energy, enabling simultaneous 20nm thickness reduction for biological sections which are collected on 4-inch wafer. Together with SEM imaging and volume stitchingit is trustworthy and efficient to achieve three-dimensional electron microscopy imaging of millimeter-scale samples for ultra large scale connectomics.